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InGaAs photodetector
For lightwave applications operating in the critical near-infrared window—specifically between 1300 nm and 1650 nm—the InGaAs photodetector has established itself as the premier industry standard. Indium Gallium Arsenide (InGaAs), particularly when lattice-matched to an Indium Phosphide (InP) substrate, features a narrow bandgap of approximately 0.75 eV.
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